Power Devices
Leveraging advanced chip design, packaging technology, and rigorous production quality control, Tongxin Micro has developed a comprehensive portfolio of power device products, including Shielded Gate Metal Oxide Semiconductor Field-Effect Transistor (SGT MOS), Superjunction Metal Oxide Semiconductor Field-Effect Transistor (SJ MOS), and Insulated Gate Bipolar Transistor (IGBT). The voltage coverage of the SGT MOS ranges from 30V–250V, SJ MOS from 500V–1200V, and IGBT from 650V–1200V. These products are compatible with mainstream packaging methods in the industry, supporting fields such as automotive electronics, solar power, industrial control, and consumer electronics, delivering solutions that address complex, multi-faceted customer requirements.